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Si (100) 1" dia x 0.5mm, 1SP, N type P doped, R: 1-10 ohm-cm - SIPa25D05C1R1 S when the temperature is higher
Si (100) 1" dia x 0.5mm, 1SP, N type P doped, R: 1-10 ohm-cm - SIPa25D05C1R1 S when the temperature is higher
$33.75
Description
when the temperature is higher than 1200°C
2mm) in diameter x 0
MTI is proud of being able to supply the best quality MgAl2O4 crystal in the world
Surface: as cut
Si (100) 1" dia x 0.5mm, 1SP, N type P doped, R: 1-10 ohm-cm - SIPa25D05C1R1 S when the temperature is higherSpecifications: Single crystal: Si Conductive type: N type, P doped Size: 1" diameter x 0. 5mm Orientation: (100) resistivities: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal Wafer A Z Plasma Cleaner Wafer Containers Dicing Saw Film Coater
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