Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t,undoped N type, 1SP R:>5000 ohm.cm Bi4Ge3O12(BGO12) The furnace can adopt either

The furnace can adopt either a 1" or  2" O

300um  ( 0

It comes with a digital micrometer

dimensionally and chemically stable and offers excellent electrical resistance

Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t,undoped N type, 1SP R:>5000 ohm.cm Bi4Ge3O12(BGO12) The furnace can adopt eitherThermal oxide Layer Research Grade , about 80 % useful area One side SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type un dped Resistivity: >5000 ohm. cm Size: 4"dia + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer