Thermal Oxide Wafer: 285nm SiO2 on Si (100), 10 x 10 x 0.5 mm, N type ,P-doped 1SP, R:1-10 ohm.cm Pressing Dies MTI-CU-GKT

MTI-CU-GKT

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Thermal Oxide Wafer: 285nm SiO2 on Si (100), 10 x 10 x 0.5 mm, N type ,P-doped 1SP, R:1-10 ohm.cm Pressing Dies MTI-CU-GKTThermal oxide Layer SiO2 layer on Silicon wafer Oxide layer thickness: 285 nm ( 500A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type P dped Resistivity: 1 10 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 10 x 10 x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related Products