Al2O3 - Sapphire Wafer, C-plane (0001), 10x10x0.25mm, 1SP ALC1010025S1 High-Throughput Coating

Al2O3 - Sapphire Wafer, C-plane (0001), 10x10x0.25mm, 1SP ALC1010025S1 High-Throughput CoatingFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 10 x 10 x 0. 25(+ 0. 05) mm thick Orientation: <0001> + 0. 5o Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A one side polished Package: Each wafer is packed in 1000 class clean room with 100 grade plastic

MTI diamond blade is hot pressed and sintered by full diamond powder which has a five times longer service life than that of ordinary edge sintered diamond blades

Major Flat: A-axis[11-20]+/-0

1 sides polished

instead loading sample directly inside tube

Set pressure low limit and high limit on digital pressure gauge

In order get longer tube service life

Two pushing rods highly polished and perfectly fitted into die

a major advantage over other compressing jigs where the clamping force of the split cell weakens once the mechanical jack loses pressure

MTI supplies high quality hot pressed SiC cutting blades with 8" diameter x 0

Working Voltage 208 - 240V AC (single-phase)

2" larger diameter Alumina tube is made with high purity Al2O3 material

2 side polished